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FDC6327C 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDC6327C 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page FDC6327C, Rev. E FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications • DC/DC converter • Load switch • Motor driving July 2000 Features • N-Channel 2.7A, 20V. R DS(on) = 0.08 Ω @ V GS = 4.5V R DS(on) = 0.12 Ω @ V GS = 2.5V • P-Channel -1.6A, -20V.R DS(on) = 0.17 Ω @ V GS = -4.5V R DS(on) = 0.25 Ω @ V GS = -2.5V • Fast switching speed. • Low gate charge. • High performance trench technology for extremely low R DS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick). 1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter N-Channel P-Channel Units VDSS Drain-Source Voltage 20 -20 V VGSS Gate-Source Voltage ±8 ±8V ID Drain Current - Continuous (Note 1a) 2.7 -1.9 A - Pulsed 8 -8 PD Power Dissipation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .327 FDC6327C 7” 8mm 3000 D1 S2 G1 D2 S1 G2 SuperSOT -6 TM 1 5 6 3 2 4 |
类似零件编号 - FDC6327C |
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类似说明 - FDC6327C |
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