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FDC6327C 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FDC6327C 数据表(HTML) 3 Page - Fairchild Semiconductor |
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3 / 12 page  FDC6327C, Rev. E Electrical Characteristics (continued) T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) td(on) Turn-On Delay Time N-Ch P-Ch 5 7 15 14 ns tr Turn-On Rise Time N-Ch P-Ch 9 14 18 25 ns td(off) Turn-Off Delay Time N-Ch P-Ch 12 14 22 25 ns tf Turn-Off Fall Time N-Channel VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Ω P-Channel VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 Ω N-Ch P-Ch 3 3 9 9 ns Qg Total Gate Charge N-Ch P-Ch 3.25 2.85 4.5 4.0 nC Qgs Gate-Source Charge N-Ch P-Ch 0.65 0.68 nC Qgd Gate-Drain Charge N-Channel VDS = 10 V, ID = 2.7 A, VGS = 4.5V P-Channel VDS = -10 V, ID = -1.9 A,VGS = -4.5V N-Ch P-Ch 0.90 0.65 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current N-Ch P-Ch 0.8 -0.8 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.8 A (Note 2) VGS = 0 V, IS = - 0.8 A (Note 2) N-Ch P-Ch 0.76 -0.79 1.2 -1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 °C/W when mounted on a 0.005 in2 pad of 2 oz. copper. c) 180 °C/W when mounted on a 0.0015 in2 pad of 2 oz. copper. |
类似零件编号 - FDC6327C |
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类似说明 - FDC6327C |
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