L9015RLT3G datasheet(1/4 Pages) LRC

部件名	L9015RLT3G

功能描述	General Purpose Transistors PNP Silicon

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制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

-45

V

Collector-Base Voltage

VCBO

-50

V

Emitter-Base Voltage

VEBO

Collector current-continuoun

IC

-100

mA

THERMAL CHARATEERISTICS

Symbol

Max

Unit

Total Device Dissipation FR-5 Board.(1)

PD

225

mW

1.8

mW/

oC

Thermal Resistance, Junction to Ambient

RJA

556

oC/W

PD

300

mW

2.4

mW/

oC

Thermal Resistance, Junction to Ambient

RJA

417

oC/W

Junction and Storage Temperature

TJ ,Tstg

-55 to +150

oC

Total Device Dissipation

Alumina Substrate, (2) TA=25

oC

Derate above 25

oC

Rating

Characteristic

TA=25

oC

Derate above 25

oC

General Purpose Transistors

PNP Silicon

FEATURE

Complementary to L9014.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L9015QLT1G

15Q

3000/Tape&Reel

L9015QLT3G

15Q

10000/Tape&Reel

L9015RLT1G

15R

3000/Tape&Reel

L9015RLT3G

15R

10000/Tape&Reel

L9015SLT1G

15S

3000/Tape&Reel

L9015SLT3G

15S

10000/Tape&Reel

1

BASE

COLLECTOR

3

2

EMITTER

We declare that the material of product compliance with RoHS requirements.

L9015QLT1G

1

SOT– 23

Series

-5

V

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

3

Rev.O 1/4

类似零件编号 - L9015RLT3G

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