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1N5404 数据表(PDF) 1 Page - Diotec Semiconductor

部件名 1N5404
功能描述  Silicon Rectifier Diodes . Silizium-Gleichrichterdioden
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

1N5404 数据表(HTML) 1 Page - Diotec Semiconductor

  1N5404 Datasheet HTML 1Page - Diotec Semiconductor 1N5404 Datasheet HTML 2Page - Diotec Semiconductor  
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1N5400 ... 1N5408
1N5400 ... 1N5408
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2013-04-30
Dimensions - Maße [mm]
Nominal current
Nennstrom
3 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...1000 V
Plastic case
Kunststoffgehäuse
~ DO-201
Weight approx.
Gewicht ca.
0.8 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N5400
50
50
1N5401
100
100
1N5402
200
200
1N5404
400
400
1N5406
600
600
1N5407
800
800
1N5408
1000
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
3 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
180/200 A
Rating for fusing, Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
166 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.2±0.05
Ø 4.5+0.1
-0.3


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