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X0203NA1BA2 数据表(PDF) 1 Page - STMicroelectronics |
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X0203NA1BA2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 5 page X02xxxA ® January 1995 SENSITIVE GATE SCR Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 ° conduction angle) Tl= 60 °C 1.25 A IT(AV) Mean on-state current (180 ° conduction angle) Tl= 60 °C 0.8 A ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 8.3 ms 25 A tp = 10 ms 22.5 I 2t I 2t Value for fusing tp = 10 ms 2.5 A 2s dI/dt Critical rate of rise of on-state current IG =10 mA diG /dt = 0.1 A/ µs. 30 A/ µs Tstg Tj Storage and operating junction temperature range - 40, + 150 - 40, + 125 °C Tl Maximum lead temperature for soldering during 10s at 2mm from case 260 °C ABSOLUTE RATINGS (limiting values) TO92 (Plastic) IT(RMS) = 1.25A VDRM = 200V to 800V Low IGT < 200 µA FEATURES Symbol Parameter Voltage Unit BD M N VDRM VRRM Repetitive peak off-state voltage Tj = 125 °CRGK =1KΩ 200 400 600 800 V The X02xxxA series of SCRs uses a high performance TOP GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. DESCRIPTION K G A 1/5 |
类似零件编号 - X0203NA1BA2 |
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类似说明 - X0203NA1BA2 |
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