0.040 (1.02)

0.100 (2.54)

0.050 (1.27)

45°

0.040 (1.02)

13

0.030 (0.76)

NOM

0.184 (4.67)

0.209 (5.31)

1.00 (25.4)

MIN

0.255 (6.48)

ANODE

(CASE)

Ø0.020 (0.51) 2X

1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.

2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.

3. RMA flux is recommended.

4. Methanol or isopropyl alcohols are recommended as cleaning

agents.

6. As long as leads are not under any stress or spring tension

PACKAGE DIMENSIONS

FEATURES

• Good optical to mechanical alignment

• Mechanically and wavelength matched to the

TO-18 series phototransistor

• Hermetically sealed package

• High irradiance level

• (*) Indicates JEDEC registered values

Parameter

Symbol

Rating

Unit

Operating Temperature

-65 to +125

°C

*Storage Temperature

-65 to +150

°C

240 for 5 sec

°C

260 for 10 sec

°C

*Continuous Forward Current

100

mA

*Forward Current (pw, 1µs; 200Hz)

10

A

*Reverse Voltage

3V

170

mW

1.3

W

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

1N6266

GaAs INFRARED EMITTING DIODE

DESCRIPTION

• The 1N6266 is a 940 nm LED in a

narrow angle, TO-46 package.

ANODE

(Connected

To Case)

3

1

CATHODE

SCHEMATIC

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

*Peak Emission Wavelength

P

935

—

955

nm

Emission Angle at 1/2 Power

—

±10

—

Deg.

Forward Voltage

——

1.7

V

*Reverse Leakage Current

——

10

µA

*Radiant Intensity

Ie

25

——

mW/sr

Rise Time 0-90% of output

—

1.0

—

µs

Fall Time 100-10% of output

—

1.0

—

µs



 2001 Fairchild Semiconductor Corporation

DS300278

3/12/01

1 OF 7

www.fairchildsemi.com