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1N5227B 数据表(PDF) 1 Page - Fairchild Semiconductor |
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1N5227B 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page 1N5226B - 1N5257B Series Half Watt Zeners Device VZ (V) ZZ ( Ω) IZT (mA) ZZK ( Ω) IZK (mA) VR (V) IR ( µA) TC (%/ °C) 1N5226B 1N5227B 1N5228B 1N5229B 3.3 3.6 3.9 4.3 28 24 23 22 20 20 20 20 1,600 1,700 1,900 2,000 0.25 0.25 0.25 0.25 1.0 1.0 1.0 1.0 25 15 10 5.0 - 0.07 - 0.065 - 0.06 +/- 0.055 1N5230B 1N5231B 1N5232B 1N5233B 4.7 5.1 5.6 6.0 19 17 11 7.0 20 20 20 20 1,900 1,600 1,600 1,600 0.25 0.25 0.25 0.25 2.0 2.0 3.0 3.5 5.0 5.0 5.0 5.0 +/- 0.03 +/- 0.3 0.038 0.038 1N5234B 1N5235B 1N5236B 1N5237B 1N5238B 6.2 6.8 7.5 8.2 8.7 7.0 5.0 6.0 8.0 8.0 20 20 20 20 20 1,000 750 500 500 600 0.25 0.25 0.25 0.25 0.25 4.0 5.0 6.0 6.5 6.5 5.0 3.0 3.0 3.0 3.0 0.045 0.05 0.058 0.062 0.065 1N5239B 1N5240B 1N5241B 1N5242B 9.1 10 11 12 10 17 22 30 20 20 20 20 600 600 600 600 0.25 0.25 0.25 0.25 7.0 8.0 8.4 9.1 3.0 3.0 2.0 1.0 0.068 0.075 0.076 0.077 VF Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series Absolute Maximum Ratings* TA = 25°C unless otherwise noted Tolerance: B = 5% Electrical Characteristics TA = 25°C unless otherwise noted NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. *These ratings are limiting values above which the serviceability of the diode may be impaired. **Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C. @ @ @ Parameter Value Units Storage Temperature Range -65 to +200 °C Maximum Junction Operating Temperature + 200 °C Lead Temperature (1/16” from case for 10 seconds) + 230 °C Total Device Dissipation Derate above 75 °C 500 4.0 mW mW/ °C Surge Power** 10 W NOTE: National preferred devices in BOLD DO-35 ©1997 Fairchild Semiconductor Corporation 1N5200B Rev. A |
类似零件编号 - 1N5227B |
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类似说明 - 1N5227B |
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