MMDF3207

3

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage(1)

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

—

TBD

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 55°C)

IDSS

—

—

—

—

1.0

5.0

µAdc

Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage(1)

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.6

—

—

TBD

—

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance(1)

(VGS = 4.5 Vdc, ID = 7.8 Adc)

(VGS = 2.5 Vdc, ID = 6.2 Adc)

RDS(on)

—

—

TBD

TBD

33

50

m

Ω

Forward Transconductance (VDS = 10 Vdc, ID = 7.8 Adc)(1)

gFS

—

TBD

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

15 Vdc V

0 V

Ciss

—

TBD

TBD

pF

Output Capacitance

(VDS = 15 Vdc, VGS = 0 V,

f = 1.0 MHz)

Coss

—

TBD

TBD

Transfer Capacitance

f = 1.0 MHz)

Crss

—

TBD

TBD

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

10 Vd

I

1 0 Ad

td(on)

—

TBD

TBD

ns

Rise Time

(VDS = 10 Vdc, ID = 1.0 Adc,

VGS =10Vdc

tr

—

TBD

TBD

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)(1)

td(off)

—

TBD

TBD

Fall Time

G

)

tf

—

TBD

TBD

Turn–On Delay Time

(V

10 Vd

I

1 0 Ad

td(on)

—

TBD

TBD

Rise Time

(VDD = 10 Vdc, ID = 1.0 Adc,

VGS =4 5Vdc

tr

—

TBD

TBD

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)(1)

td(off)

—

TBD

TBD

Fall Time

G

)

tf

—

TBD

TBD

Gate Charge

(V

10 Vd

I

7 8 Ad

QT

—

TBD

TBD

nC

(VDS = 10 Vdc, ID = 7.8 Adc,

(1)

Q1

—

TBD

—

( DS

, D

,

VGS = 4.5 Vdc)(1)

Q2

—

TBD

—

Q3

—

TBD

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.7 Adc, VGS = 0 Vdc)(1)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

TBD

TBD

1.2

—

Vdc

Reverse Recovery Time

(I

1 7 Ad

V

0 Vd

trr

—

TBD

—

ns

(IS = 1.7 Adc, VGS = 0 Vdc,

(1)

ta

—

TBD

—

( S

,

GS

,

dIS/dt = 100 A/µs)(1)

tb

—

TBD

—

Reverse Recovery Stored Charge

QRR

—

TBD

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperatures.

(3) Repetitive rating; pulse width limited by max. junction temperature.