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APT10M11LVR 数据表(PDF) 3 Page - Advanced Power Technology

部件名 APT10M11LVR
功能描述  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
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制造商  ADPOW [Advanced Power Technology]
网页  http://www.advpowertech.com
标志 ADPOW - Advanced Power Technology

APT10M11LVR 数据表(HTML) 3 Page - Advanced Power Technology

  APT10M11LVR Datasheet HTML 1Page - Advanced Power Technology APT10M11LVR Datasheet HTML 2Page - Advanced Power Technology APT10M11LVR Datasheet HTML 3Page - Advanced Power Technology APT10M11LVR Datasheet HTML 4Page - Advanced Power Technology  
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V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
2.5
0
2468
0
50
100
150
200
250
300
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
APT10M11LVR
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
200
160
120
80
40
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
200
160
120
80
40
0
200
160
120
80
40
0
120
100
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
VDS> ID (ON) x RDS (ON)MAX.
250
µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=7V, 10V & 15V
6V
VGS=10 & 15V
VGS=10V
VGS=20V
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
7V
5.5V
4.5V
5V
4V
6V
5.5V
4.5V
5V
4V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]


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