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AOWF11N70 数据表(PDF) 2 Page - Alpha & Omega Semiconductors

部件名 AOWF11N70
功能描述  700V,11A N-Channel MOSFET
Download  5 Pages
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制造商  AOSMD [Alpha & Omega Semiconductors]
网页  http://www.aosmd.com
标志 AOSMD - Alpha & Omega Semiconductors

AOWF11N70 数据表(HTML) 2 Page - Alpha & Omega Semiconductors

  AOWF11N70 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOWF11N70 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOWF11N70 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOWF11N70 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOWF11N70 Datasheet HTML 5Page - Alpha & Omega Semiconductors  
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background image
AOWF11N70
Symbol
Min
Typ
Max
Units
700
800
BVDSS
/∆TJ
0.8
V/
oC
1
10
IGSS
Gate-Body leakage current
±100
n
Α
VGS(th)
Gate Threshold Voltage
3
3.8
4.5
V
RDS(ON)
0.72
0.87
gFS
17
S
VSD
0.72
1
V
IS
Maximum Body-Diode Continuous Current
11
A
ISM
43
A
Ciss
1430
1793
2150
pF
Coss
116
146
190
pF
Crss
8.4
10.5
15
pF
Rg
1.8
3.6
5.4
Qg
30
37.5
45
nC
Qgs
10
nC
Qgd
15
nC
tD(on)
42
ns
tr
74
ns
tD(off)
103
ns
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
IS=1A,VGS=0V
VDS=40V, ID=5.5A
Forward Transconductance
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
Zero Gate Voltage Drain Current
VDS=700V, VGS=0V
µA
BVDSS
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
VGS=10V, VDS=350V, ID=11A,
RG=25Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=560V, ID=11A
DYNAMIC PARAMETERS
VDS=5V, ID=250µA
VDS=560V, TJ=125°C
VDS=0V, VGS=±30V
V
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
D(off)
tf
62
ns
trr
320
400
480
ns
Qrr
7.2
9
11
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IF=11A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P
D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, I
AS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev0: Dec 2011
www.aosmd.com
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