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AOWF11N70 数据表(PDF) 1 Page - Alpha & Omega Semiconductors

部件名 AOWF11N70
功能描述  700V,11A N-Channel MOSFET
Download  5 Pages
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制造商  AOSMD [Alpha & Omega Semiconductors]
网页  http://www.aosmd.com
标志 AOSMD - Alpha & Omega Semiconductors

AOWF11N70 数据表(HTML) 1 Page - Alpha & Omega Semiconductors

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AOWF11N70
700V,11A N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
11A
RDS(ON) (at VGS=10V)
< 0.87
100% UIS Tested
100% Rg Tested
Symbol
VDS
The AOWF11N70 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.
V
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
800V@150℃
Drain-Source Voltage
AOWF11N70
700
G
D
S
Top View
TO-262F
Bottom View
G
D
S
G
D
S
AOWF11N70
VGS
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt
dv/dt
TJ, TSTG
TL
Symbol
RθJA
RθJC
* Drain current limited by maximum junction temperature.
Maximum Junction-to-Case
28
0.22
Avalanche Current
C
120
Single pulsed avalanche energy
G
240
Parameter
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Junction and Storage Temperature Range
Derate above 25
oC
Repetitive avalanche energy
C
TC=25°C
Thermal Characteristics
5
Power Dissipation
B
V
±30
Gate-Source Voltage
11*
7.2*
TC=100°C
A
43
Pulsed Drain Current
C
Continuous Drain
Current
TC=25°C
ID
Maximum Junction-to-Ambient
A,D
°C
PD
V/ns
mJ
4.5
4
°C/W
AOWF11N70
Units
A
°C
mJ
W
W/
oC
°C/W
65
300
-55 to 150
Rev0: Dec 2011
www.aosmd.com
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