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AOWF10N60 数据表(PDF) 2 Page - Alpha & Omega Semiconductors

部件名 AOWF10N60
功能描述  600V,10A N-Channel MOSFET
Download  6 Pages
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制造商  AOSMD [Alpha & Omega Semiconductors]
网页  http://www.aosmd.com
标志 AOSMD - Alpha & Omega Semiconductors

AOWF10N60 数据表(HTML) 2 Page - Alpha & Omega Semiconductors

  AOWF10N60 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOWF10N60 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOWF10N60 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOWF10N60 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOWF10N60 Datasheet HTML 5Page - Alpha & Omega Semiconductors AOWF10N60 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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background image
AOW10N60/AOWF10N60
Symbol
Min
Typ
Max
Units
600
700
BVDSS
/∆TJ
0.65
V/
oC
1
10
IGSS
Gate-Body leakage current
±100
n
Α
VGS(th)
Gate Threshold Voltage
3
4
4.5
V
RDS(ON)
0.6
0.75
gFS
15
S
VSD
0.73
1
V
IS
Maximum Body-Diode Continuous Current
10
A
ISM
36
A
Ciss
1100
1320
1600
pF
Coss
105
130
170
pF
Crss
7.5
9.3
14
pF
Rg
3
3.8
6
Qg
31
40
nC
Qgs
6
10
nC
Qgd
14.4
22
nC
tD(on)
28
35
ns
tr
66
80
ns
tD(off)
76
95
ns
tf
64
80
ns
trr
290
350
ns
Qrr
3.9
4.7
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance
VGS=10V, ID=5A
Reverse Transfer Capacitance
IF=10A,dI/dt=100A/µs,VDS=100V
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
IS=1A,VGS=0V
VDS=40V, ID=5A
Forward Transconductance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
VDS=5V ID=250µA
VDS=480V, TJ=125°C
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
ID=250µA, VGS=0V
Diode Forward Voltage
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=10A,
RG=25Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=480V, ID=10A
Gate Source Charge
Gate Drain Charge
BVDSS
Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
µA
VDS=0V, VGS=±30V
V
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=4.4A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev2: June 2010
www.aosmd.com
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