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AON7506 数据表(PDF) 1 Page - Alpha & Omega Semiconductors

部件名 AON7506
功能描述  30V N-Channel AlphaMOS
Download  6 Pages
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制造商  AOSMD [Alpha & Omega Semiconductors]
网页  http://www.aosmd.com
标志 AOSMD - Alpha & Omega Semiconductors

AON7506 数据表(HTML) 1 Page - Alpha & Omega Semiconductors

  AON7506 Datasheet HTML 1Page - Alpha & Omega Semiconductors AON7506 Datasheet HTML 2Page - Alpha & Omega Semiconductors AON7506 Datasheet HTML 3Page - Alpha & Omega Semiconductors AON7506 Datasheet HTML 4Page - Alpha & Omega Semiconductors AON7506 Datasheet HTML 5Page - Alpha & Omega Semiconductors AON7506 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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AON7506
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
ID (at VGS=10V)
12A
RDS(ON) (at VGS=10V)
< 9.8m
RDS(ON) (at VGS=4.5V)
< 15.8 m
Application
100% UIS Tested
100% Rg Tested
Symbol
VDS
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
Drain-Source Voltage
30
G
D
S
Top View
1
2
3
4
8
7
6
5
DFN 3x3 EP
Top View
Bottom View
Pin 1
VDS
VGS
IDM
IAS
EAS
VDS Spike
VSPIKE
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
9.4
100ns
36
V
A
20
Avalanche energy L=0.05mH
C
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
5
75
6
60
W
20.5
TC=25°C
8
TC=100°C
PDSM
W
TA=70°C
2
TA=25°C
3.1
Typ
Max
V
TC=25°C
TC=100°C
48
Pulsed Drain Current
C
Continuous Drain
Current
G
Power Dissipation
B
PD
Power Dissipation
A
mJ
Avalanche Current
C
10.5
Continuous Drain
Current
G
10
12
A
TA=25°C
IDSM
A
TA=70°C
ID
12
40
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
Maximum Junction-to-Ambient
A
°C/W
RθJA
30
Units
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Rev0 : July 2012
www.aosmd.com
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