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ADG739 数据表(PDF) 6 Page - Analog Devices

部件名 ADG739
功能描述  CMOS, Low-Voltage, 3-Wire Serially-Controlled, Matrix Switches
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADG739 数据表(HTML) 6 Page - Analog Devices

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REV. 0
ADG738/ADG739
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25
°C unless otherwise noted.)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Continuous Current, Each S . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current D, ADG739 . . . . . . . . . . . . . . . . . 80 mA
Continuous Current D, ADG738 . . . . . . . . . . . . . . . . 120 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
°C
TSSOP Package
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . 150.4°C/W
θJC Thermal Impedance . . . . . . . . . . . . . . . . . . . . 27.6°C/W
Lead Temperature, Soldering (10 seconds) . . . . . . . . . . 300
°C
IR Reflow, Peak Temperature . . . . . . . . . . . . . . . . . . . . 220
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
CD, CS (ON) “ON” Switch Capacitance. Measured with refer-
ence to ground.
CIN
Digital Input Capacitance.
tON
Delay time between the 50% and 90% points
of the
SYNC rising edge and the switch “ON”
condition.
tOFF
Delay time between the 50% and 90% points
of the
SYNC rising edge and the switch “OFF”
condition.
tD
“OFF” time measured between the 80% points of
both switches when switching from one switch to
another.
Charge
A measure of the glitch impulse transferred from
Injection
the digital input to the analog output during
switching.
Off Isolation
A measure of unwanted signal coupling through
an “OFF” switch.
Crosstalk
A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
Bandwidth
The frequency at which the output is attenuated
by 3 dBs.
On Response The frequency response of the “ON” switch.
Insertion
The loss due to the ON resistance of the switch.
Loss
VDD
Most Positive Power Supply Potential.
IDD
Positive Supply Current.
GND
Ground (0 V) Reference.
S
Source Terminal. May be an input or output.
D
Drain Terminal. May be an input or output.
VD (VS)
Analog Voltage on Terminals D, S.
RON
Ohmic Resistance between D and S.
∆RON
On Resistance Match Between any Two Chan-
nels, i.e., RONmax – RONmin.
RFLAT(ON)
Flatness is defined as the difference between the
maximum and minimum value of on resistance
as measured over the specified analog signal range.
IS (OFF)
Source Leakage Current with the Switch “OFF.”
ID (OFF)
Drain Leakage Current with the Switch “OFF.”
ID, IS (ON)
Channel Leakage Current with the Switch “ON.”
VINL
Maximum Input Voltage for Logic “0.”
VINH
Minimum Input Voltage for Logic “1.”
IINL(IINH)
Input Current of the Digital Input.
CS (OFF)
“OFF” Switch Source Capacitance. Measured
with reference to ground.
CD (OFF)
“OFF” Switch Drain Capacitance. Measured
with reference to ground.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the ADG738/ADG739 feature proprietary ESD protection circuitry, permanent damage may occur
on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions
are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE


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