MJE8503A

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(IC = 100 mAdc, IB = 0)

VCEO(sus)

700

—

—

Vdc

Collector Cutoff Current

(VCE = 1500 Vdc, VBE = 0, TC = 25°C)

(VCE = 1500 Vdc, VBE = 0, TC = 125°C)

ICES

—

—

—

—

0.1

2.0

mAdc

Collector Cutoff Current

(VCE = 1500 Vdc, RBE = 50 Ohms, TC = 100°C)

ICER

—

—

5.0

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

IEBO

—

—

1.0

mAdc

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

IS/b

See Figure 2

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 Adc, VCE = 5.0 Vdc)

(IC = 4.5 Adc, VCE = 5.0 Vdc)

hFE

7.5

2.25

—

—

—

—

—

Base-Emitter Saturation Voltage

(IC = 2.5 Adc, IB = 1.0 Vdc)

(IC = 4.5 Adc, IB = 2.0 Vdc)

VBE(sat)

—

—

—

—

1.5

1.5

Vdc

Collector-Emitter Saturation Voltage

(IC = 2.5 Adc, IB = 1.0 Vdc)

(IC = 4.5 Adc, IB = 2.0 Vdc)

VCE(sat)

—

—

—

—

2.0

3.0

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain — Bandwidth Product

(IC = 0.1 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

fT

—

7.0

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 0.1 MHz)

Cob

—

125

—

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

(IC = 2.5 Adc, IB = 1.0 Adc, VCC = 500 Vdc

VBE(off) = 5.0 Vdc, tp = 50 µs)

td

—

0.06

0.2

µs

Rise Time

(IC = 2.5 Adc, IB = 1.0 Adc, VCC = 500 Vdc

VBE(off) = 5.0 Vdc, tp = 50 µs)

tr

—

0.08

2.0

Storage Time

(IC = 2.5 Adc, IB = 1.0 Adc, VCC = 500 Vdc

VBE(off) = 5.0 Vdc, tp = 50 µs)

ts

—

1.2

4.0

Fall Time

tf

—

0.7

2.0

Inductive Load (Table 1)

Storage Time

(IC = 2.5 Adc, IB = 1.0 Adc, Vclamp = 500 Vdc

VBE(off) = 5.0 Vdc, tp = 50 µs)

tsv

—

1.2

—

µs

Crossover Time

(IC = 2.5 Adc, IB = 1.0 Adc, Vclamp = 500 Vdc

VBE(off) = 5.0 Vdc, tp = 50 µs)

tc

—

0.45

—

Fall Time

VBE(off) = 5.0 Vdc, tp = 50 µs)

tfi

—

0.18

—

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2%