MC33163DWR2 datasheet(2/16 Pages) ONSEMI

部件名	MC33163DWR2

功能描述	3.4 A, Step-Up/Down/ Inverting Switching Regulators

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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MC34163, MC33163

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MAXIMUM RATINGS (Note 1)

Rating

Symbol

Value

Unit

Power Supply Voltage

VCC

40

V

Switch Collector Voltage Range

VC(switch)

−1.0 to + 40

V

Switch Emitter Voltage Range

VE(switch)

− 2.0 to VC(switch)

V

Switch Collector to Emitter Voltage

VCE(switch)

40

V

Switch Current (Note 2)

ISW

3.4

A

Driver Collector Voltage

VC(driver)

−1.0 to +40

V

Driver Collector Current

IC(driver)

150

mA

Bootstrap Input Current Range (Note 2)

IBS

−100 to +100

mA

Current Sense Input Voltage Range

VIpk (Sense)

(VCC−7.0) to (VCC+1.0)

V

Feedback and Timing Capacitor Input Voltage Range

Vin

−1.0 to + 7.0

V

Low Voltage Indicator Output Voltage Range

VC(LVI)

−1.0 to + 40

V

Low Voltage Indicator Output Sink Current

IC(LVI)

10

mA

Thermal Characteristics

P Suffix, Dual−In−Line Case 648C

Thermal Resistance, Junction−to−Air

Thermal Resistance, Junction−to−Case (Pins 4, 5, 12, 13)

DW Suffix, Surface Mount Case 751G

Thermal Resistance, Junction−to−Air

Thermal Resistance, Junction−to−Case (Pins 4, 5, 12, 13)

RqJA

RqJC

RqJA

RqJC

80

15

94

18

°C/W

Operating Junction Temperature

TJ

+150

°C

Operating Ambient Temperature (Note 3)

MC34163

MC33163

TA

0 to +70

− 40 to + 85

°C

Storage Temperature Range

Tstg

− 65 to +150

°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. This device series contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL−STD−883, Method 3015.

Machine Model Method 150 V.

2. Maximum package power dissipation limits must be observed.

3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.

ORDERING INFORMATION

Device

Package

Shipping†

MC33163DW

SOIC−16W

47 Units / Rail

MC33163DWG

SOIC−16W

(Pb−Free)

47 Units / Rail

MC33163DWR2

SOIC−16W

1000 Units / Reel

MC33163DWR2G

SOIC−16W

(Pb−Free)

1000 Units / Reel

MC33163P

PDIP−16

25 Units / Rail

MC33163PG

PDIP−16

(Pb−Free)

25 Units / Rail

MC34163DW

SOIC−16W

47 Units / Rail

MC34163DWG

SOIC−16W

(Pb−Free)

47 Units / Rail

MC34163DWR2

SOIC−16W

1000 Units / Reel

MC34163DWR2G

SOIC−16W

(Pb−Free)

1000 Units / Reel

MC34163P

PDIP−16

25 Units / Rail

MC34163PG

PDIP−16

(Pb−Free)

25 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

类似零件编号 - MC33163DWR2

制造商	部件名	数据表	功能描述
ON Semiconductor	MC33163DWR2	248Kb / 16P	3.4 A, Step?뭊p/Down/Inverting Switching Regulators October, 2005 ??Rev. 5
ON Semiconductor	MC33163DWR2G	248Kb / 16P	3.4 A, Step?뭊p/Down/Inverting Switching Regulators October, 2005 ??Rev. 5

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