1N4448

500mW 100Volt

Switching Diode

DO-35

Features

•

Low Current Leakage

•

Metalurgically Bonded Construction

•

Low Cost

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

MIN

MAX

NOTE

A

---

.166

---

4.2

B

---

.079

---

2.00

C

---

.020

---

.52

D

1.000

---

25.40

---

Maximum Ratings

•

Operating Temperature: -55

°C to +150°C

•

Storage Temperature: -55

°C to +150°C

•

Maximum Thermal Resistance; 35

°C/W Junction To Ambient

Electrical Characteristics @ 25°C Unless Otherwise Specified

Reverse Voltage

75V

Peak Reverse

Voltage

100V

Average Rectified

Current

150mA

Resistive Load

f >= 50Hz

Power Dissipation

500mW

Junction

Temperature

150

°C

Peak Forward Surge

Current

500mA

t<1s

Instantaneous

Forward Voltage

1.0V(MAX)

0.62-0.72V

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

25nA

50

µA

°C

°C

Typical Junction

Capacitance

4pF

Measured at

Reverse Recovery

Time

4nS

Ω

*Pulse test: Pulse width 300

µsec, Duty cycle 2%

A

B

C

D

D

Cathode

Mark

5uA

omponents

20736 Marilla

Chatsworth



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MCC

Revision: B

2012/01/01

TM

Micro Commercial Components

•

Marking : Cathode band and type number

1 of 4

•

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

Compliant. See ordering information)

•

Moisture Sensitivity Level 1

Note:

1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.