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FDD2572_F085 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDD2572_F085 数据表(HTML) 2 Page - Fairchild Semiconductor |
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2 / 11 page  FDD2572_F085 Rev.A 2 www.fairchildsemi.com Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Resistive Switching Characteristics (VGS = 10V) Drain-Source Diode Characteristics Notes: 1: Starting TJ = 25°C, L = 0.2mH, IAS = 19A. Device Marking Device Package Reel Size Tape Width Quantity FDD257 2 FDD2572 _F085 TO-252AA 330mm 16mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 150 - - V IDSS Zero Gate Voltage Drain Current VDS = 120V - - 1 µA VGS = 0V TC = 150 o -- 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2 - 4 V rDS(ON) Drain to Source On Resistance ID=9A, VGS=10V - 0.045 0.054 Ω ID = 4A, VGS = 6V, - 0.050 0.075 ID=9A, VGS=10V, TC=175 oC - 0.126 0.146 CISS Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz -1770 - pF COSS Output Capacitance - 183 - pF CRSS Reverse Transfer Capacitance - 40 - pF Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 75V ID = 9A Ig = 1.0mA -26 34 nC Qg(TH) Threshold Gate Charge VGS = 0V to 2V - 3.3 4.3 nC Qgs Gate to Source Gate Charge - 8 - nC Qgs2 Gate Charge Threshold to Plateau - 5 - nC Qgd Gate to Drain “Miller” Charge - 6 - nC tON Turn-On Time VDD = 75V, ID = 9A VGS = 10V, RGS = 11.0Ω -- 36 ns td(ON) Turn-On Delay Time - 11 - ns tr Rise Time - 14 - ns td(OFF) Turn-Off Delay Time - 31 - ns tf Fall Time - 14 - ns tOFF Turn-Off Time - - 66 ns VSD Source to Drain Diode Voltage ISD = 9A - - 1.25 V ISD = 4A - - 1.0 V trr Reverse Recovery Time ISD = 9A, dISD/dt =100A/µs- - 74 ns QRR Reverse Recovered Charge ISD = 9A, dISD/dt =100A/µs - - 169 nC |
类似零件编号 - FDD2572_F085_08 |
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类似说明 - FDD2572_F085_08 |
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