数据搜索系统,热门电子元器件搜索 |
|
STP2301_V1 数据表(PDF) 3 Page - List of Unclassifed Manufacturers |
|
STP2301_V1 数据表(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 7 page STP2301 P Channel Enhancement Mode MOSFET -2.8A 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP2301 2007. V1 3 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -20 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA -0.4 -1.0 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 uA VDS=-20V,VGS=0V TJ=55℃ -10 Drain-source On-Resistance RDS(on) VGS=-4.5V,ID=-2.8A VGS=-2.5V,ID=-2.0A 0.090 0.110 Ω Forward Transconductance gfs VDS=-5V,ID=-2.8V 6.5 S Diode Forward Voltage VSD IS=-1.6A,VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-6V VGS=-4.5V ID≡-2.8A 4.8 8 nC Gate-Source Charge Qgs 0.75 Gate-Drain Charge Qgd 1.4 Input Capacitance Ciss VDS=-6V VGS=0V F=1MHz 35 pF Output Capacitance Coss 150 Reverse Transfer Capacitance Crss 60 Turn-On Time td(on) tr VDD=-6V RL=6Ω ID=-1A VGEN=-4.5V RG=6Ω 10 20 nS 32 45 Turn-Off Time td(off) tf 38 55 30 50 |
类似零件编号 - STP2301_V1 |
|
类似说明 - STP2301_V1 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |