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ST2306SRG_V1 数据表(PDF) 3 Page - List of Unclassifed Manufacturers |
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ST2306SRG_V1 数据表(HTML) 3 Page - List of Unclassifed Manufacturers |
3 / 6 page ST2306SRG N Channel Enhancement Mode MOSFET 3.2A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2306SRG 2005. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 3.0 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=1.0V 1 uA VDS=30V,VGS=0V TJ=55℃ 10 Drain-source On-Resistance RDS(on) VGS=10V,ID=3.2A VGS=4.5V,ID=2.0A VGS=2.5V,ID=1.5A 0.045 0.062 0.092 0.052 0.067 0.100 Ω Forward Transconductance gfs VDS=4.5V,ID=2.5V 4.6 S Diode Forward Voltage VSD IS=1.25A,VGS=0V 1.2 V Dynamic Total Gate Charge Qg VDS=15V VGS=10V ID≡2.5A 4.5 10 nC Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.0 Input Capacitance Ciss VDS=15V VGS=0V F=1MHz 240 pF Output Capacitance Coss 110 Reverse Transfer Capacitance Crss 17 Turn-On Time td(on) tr VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 8.0 20 nS 12 30 Turn-Off Time td(off) tf 17 35 8.0 20 |
类似零件编号 - ST2306SRG_V1 |
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类似说明 - ST2306SRG_V1 |
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