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AD5207BRU10-REEL7 数据表(PDF) 3 Page - Analog Devices |
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AD5207BRU10-REEL7 数据表(HTML) 3 Page - Analog Devices |
3 / 16 page REV. 0 –3– AD5207 Parameter Symbol Conditions Min Typ 1 Max Unit INTERFACE TIMING CHARACTERISTICS Applies to All Parts 6, 11 Input Clock Pulsewidth tCH, tCL Clock Level High or Low 10 ns Data Setup Time tDS 5ns Data Hold Time tDH 5ns CLK to SDO Propagation Delay 12 tPD RL = 1 k Ω to 5 V, C L < 20 pF 1 25 ns CS Setup Time tCSS 10 ns CS High Pulsewidth tCSW 10 ns CLK Fall to CS Fall Hold Time tCSH0 0ns CLK Fall to CS Rise Hold Time tCSH1 0ns CS Rise to Clock Rise Setup tCS1 10 ns NOTES 1 Typicals represent average readings at 25 °C and VDD = 5 V, VSS = 0 V. 2 Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. I W = VDD/R for both VDD = 5 V, VSS = 0 V. 3 V AB = VDD, Wiper (VW) = No connect. 4 INL and DNL are measured at V W with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. V A = VDD and VB = 0 V. DNL specification limits of ±1 LSB maximum are Guaranteed Monotonic operating conditions. 5 Resistor Terminals A, B, W have no limitations on polarity with respect to each other. 6 Guaranteed by design and not subject to production test. 7 Measured at the A X terminals. All AX terminals are open-circuited in shut-down mode. 8 P DISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation. 9 All dynamic characteristics use V DD = 5 V, VSS = 0 V. 10 Measured at a V W pin where an adjacent VW pin is making a full-scale voltage change. 11 See timing diagram for location of measured values. All input control voltages are specified with t R = tF = 2 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are measured using VDD = 5 V. 12 Propagation delay depends on value of V DD, RL, and CL; see applications text. The AD5207 contains 474 transistors. Die Size: 67 mil × 69 mil, 4623 sq. mil. Specifications subject to change without notice. 1 0 1 0 1 0 SDI CLK CS VOUT RDAC REGISTER LOAD A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 Figure 1a. Timing Diagram 1 0 1 0 1 0 1 0 VDD 0V SDI (DATA IN) SDO (DATA OUT) CLK CS VOUT Ax OR Dx Ax OR Dx A'x OR D'x A'x OR D'x 1LSB ERROR BAND 1LSB tDS tDH tPD_MAX tCS1 tCSH1 tCSW tS tCL tCH tCSH0 tCSS Figure 1b. Detail Timing Diagram |
类似零件编号 - AD5207BRU10-REEL7 |
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类似说明 - AD5207BRU10-REEL7 |
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