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FM25L16B-DG 数据表(PDF) 1 Page - Cypress Semiconductor |
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FM25L16B-DG 数据表(HTML) 1 Page - Cypress Semiconductor |
1 / 14 page This product conforms to specifications per the terms of the Ramtron Ramtron International Corporation standard warranty. The product has completed Ramtron’s internal 1850 Ramtron Drive, Colorado Springs, CO 80921 qualification testing and has reached production status. (800) 545-F-RAM, (719) 481-7000 www.ramtron.com Rev. 3.0 Jan. 2012 Page 1 of 14 FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM Organized as 2,048 x 8 bits High Endurance 100 Trillion (10 14) Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 20 MHz Frequency Direct Hardware Replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme Hardware Protection Software Protection Low Power Consumption Low Voltage Operation 2.7-3.6V 200 A Active Current (1 MHz) 3 A (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40C to +85C 8-pin “Green”/RoHS SOIC and TDFN Packages Description The FM25L16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25L16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been transferred to the device. The next bus cycle may commence without the need for data polling. The FM25L16B is capable of supporting 10 14 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM25L16B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25L16B provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25L16B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Pin Name Function /CS Chip Select /WP Write Protect /HOLD Hold SCK Serial Clock SI Serial Data Input SO Serial Data Output VDD Supply Voltage VSS Ground Ordering Information FM25L16B-G “Green”/RoHS 8-pin SOIC FM25L16B-GTR “Green”/RoHS 8-pin SOIC, Tape & Reel FM25L16B-DG “Green”/RoHS 8-pin TDFN FM25L16B-DGTR “Green”/RoHS 8-pin TDFN, Tape & Reel /CS SO /WP VSS VDD /HOLD SCK SI 8 7 6 5 1 2 3 4 Top View CS SO WP VSS VDD HOLD SCK SI 1 2 3 4 8 7 6 5 |
类似零件编号 - FM25L16B-DG |
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类似说明 - FM25L16B-DG |
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