TIP120 datasheet(2/3 Pages) COMSET

部件名	TIP120

功能描述	SILICON DARLINGTON POWER TRANSISTORS

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制造商	COMSET [Comset Semiconductor]

网页	http://comset.halfin.com

标志

2 / 3 page

NPN TIP120-121-122

05/10/2012

COMSET SEMICONDUCTORS

2 | 3

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-case

From junction-case

1.92

°C/W

RthJ-amb

From junction-ambient

62.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

IE= 0,VCB = VCBOmax

TIP120

-

0.2

mA

TIP121

TIP122

ICEO

Collector Cutoff Current

IE= 0

VCE = 1/2 VCEOmax

TIP120

-

0.5

mA

TIP121

TIP122

IEBO

Emitter Cutoff Current

VEB= 5 V, IC= 0

TIP120

-

2

mA

TIP121

TIP122

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC= 30 mA, IB= 0

TIP120

60

-

V

TIP121

80

-

TIP122

100

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 3 A, IB= 12 mA

TIP120

-

2

V

TIP121

TIP122

IC= 5 A, IB= 20 mA

TIP120

-

4

TIP121

TIP122

VBE(on)

Base-Emitter Voltage

(*)

IC= 3 A, VCE= 3 V

TIP120

-

2.5

V

TIP121

TIP122

hFE

DC Current Gain (*)

VCE= 3.0 V, IC= 0.5 A

TIP120

1000

-

TIP121

TIP122

VCE= 3.0 V, IC= 3 A

TIP120

1000

-

TIP121

TIP122

COB

Output Capacitance

IE= 0, VCB = 10 V,

ftest= 1MHz

TIP120

-

200

pF

TIP121

TIP122

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

类似零件编号 - TIP120

制造商	部件名	数据表	功能描述
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Fairchild Semiconductor	TIP120	168Kb / 5P	NPN Epitaxial Darlington Transistor
Diotec Semiconductor	TIP120	110Kb / 2P	Si-Epitaxial Planar Darlington Power Transistors
Nanjing International G...	TIP120	1Mb / 4P	TO-220-3L Plastic-Encapsulate Transistors
Weitron Technology	TIP120	768Kb / 3P	PNP/NPN Silicon Power Transistor

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