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IRF640 数据表(PDF) 1 Page - Comset Semiconductor |
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IRF640 数据表(HTML) 1 Page - Comset Semiconductor |
1 / 3 page IRF640 1/3 09/11/2012 COMSET SEMICONDUCTORS SEMICONDUCTORS N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 200 V IDS Continuous Drain Current TC= 37°C 18 A IDM Pulsed Drain Current TC= 25°C 72 IAR Avalanche Current, Limited by Tjmax 18 EAS Avalanche Energy, Single pulse ID = 18 A, VDD = 50 V, Tj = 25°C 280 mJ EAR Avalanche Energy, Periodic Limited by Tjmax 13 VGS Gate-Source Voltage 20 V RDS(on) Drain-Source on Resistance 0.18 Ω PT Power Dissipation at Case Temperature TC= 25°C 125 W tJ Operating Temperature 150 °C tstg Storage Temperature range -55 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJC Thermal Resistance, junction-case 1 °C/W RthJA Thermal Resistance, junction-ambient 62.5 N channel in a plastic TO220 package. They are intended for use in high speed power switching, low voltage, relay drivers and general purpose switching applications. DC-DC & DC-AC converters for telecom, industrial and lighting equipment. Compliance to RoHS. |
类似零件编号 - IRF640 |
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类似说明 - IRF640 |
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