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BD242B 数据表(PDF) 2 Page - Comset Semiconductor |
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BD242B 数据表(HTML) 2 Page - Comset Semiconductor |
2 / 3 page PNP BD242 – A – B – C 23/10/2012 COMSET SEMICONDUCTORS 2/3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICEO Collector Cutoff Current VCE=-30 V BD242 - - -0.3 mA VCE=-30 V BD242A - - VCE=-60 V BD242B - - VCE=-60 V BD242C - - IEBO Emitter Cutoff Current VBE=-5 V BD242 - - -1.0 mA BD242A - - BD242B - - BD242C - - ICES Collector Cutoff Current (VBE = 0) VCE=-55 V BD242 - - -0.2 mA VCE=-70 V BD242A - - VCE=-90 V BD242B - - VCE=-115 V BD242C - - VCEO(sus) Collector-Emitter Sustaining Voltage (IB = 0) (*) IC =-30mA BD242 -45 V BD242A -60 BD242B -80 BD242C -100 hFE DC Current Gain (*) VCE=-4 V IC=-1 A BD242 25 - - - BD242A BD242B BD242C VCE=-4 V IC=-3 A BD242 10 - - BD242A BD242B BD242C VCE(SAT) Collector-Emitter saturation Voltage (*) IC=-3 A IB=-0.6 A BD242 - - -1.2 V BD242A BD242B BD242C VBE(on) Base-Emitter Voltage (*) VCE=-4 V IC=-3 A BD242 - - -1.8 V BD242A BD242B BD242C hfe Small Signal Current Gain VCE=-10 V IC=-0.5 A f = 1KHz BD242 20 - - BD242A BD242B BD242C VCE=-10 V IC=-0.5 A f = 1MHz BD242 3 - - - BD242A BD242B BD242C (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% |
类似零件编号 - BD242B |
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类似说明 - BD242B |
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