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FQD7N10L 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQD7N10L 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page Rev. A3, October 2008 ©2008 Fairchild Semiconductor International 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 -1 10 0 10 1 25℃ 150℃ ※ Notes : 1. V GS = 0V 2. 250μs Pulse Test V SD , Source-Drain Voltage [V] 02468 10 10 -1 10 0 10 1 ※ Notes : 1. V DS = 30V 2. 250μs Pulse Test -55℃ 150℃ 25℃ V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ※ Notes : 1. 250μs Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] 01 23 4 56 7 8 0 2 4 6 8 10 12 V DS = 50V V DS = 80V ※ Note : I D = 7.3 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 100 200 300 400 500 600 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 1.5 V GS = 10V V GS = 5V ※ Note : T J = 25 ℃ I D, Drain Current [A] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
类似零件编号 - FQD7N10L_08 |
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类似说明 - FQD7N10L_08 |
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