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FDS6680A 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FDS6680A 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page November 2004 ©2012 Fairchild Semiconductor Corporation FDS6680A Rev F2(W) FDS6680A Single N-Channel, Logic Level, PowerTrench ® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V • Ultra-low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G D D D D S S S G Pin 1 SO-8 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 ID Drain Current – Continuous (Note 1a) 12.5 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Case (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13’’ 12mm 2500 units July 2012 |
类似零件编号 - FDS6680A_12 |
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类似说明 - FDS6680A_12 |
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