FDS6680A_12 datasheet(1/5 Pages) FAIRCHILD

部件名	FDS6680A

功能描述	Single N-Channel, Logic Level, PowerTrench짰 MOSFET

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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November 2004

FDS6680A Rev F2(W)

FDS6680A

Single N-Channel, Logic Level, PowerTrench

®

MOSFET

General Description

This N-Channel Logic Level MOSFET is produced

using

Fairchild

Semiconductor’s

advanced

Power

Trench process that has been especially tailored to

minimize the on-state resistance and yet maintain

superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

• 12.5 A, 30 V

RDS(ON) = 9.5 mΩ @ VGS = 10 V

RDS(ON) = 13 mΩ @ VGS = 4.5 V

• Ultra-low gate charge

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

S

D

S

SO-8

D

G

D

S

G

Pin 1

SO-8

4

3

2

1

5

6

7

8

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

30

V

VGSS

Gate-Source Voltage

±20

ID

Drain Current

– Continuous

(Note 1a)

12.5

A

– Pulsed

50

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

1.2

PD

(Note 1c)

1.0

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Case

(Note 1a)

50

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

25

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6680A

13’’

12mm

2500 units

July 2012

类似零件编号 - FDS6680A_12

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDS6680AS	551Kb / 8P	30V N-Channel PowerTrench SyncFET
	FDS6680AS	1,011Kb / 8P	30V N-Channel PowerTrench SyncFET
	FDS6680AS	1,011Kb / 8P	30V N-Channel PowerTrench SyncFET
	FDS6680AS_NL	551Kb / 8P	30V N-Channel PowerTrench SyncFET

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