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FDD3N50NZ 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDD3N50NZ 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDD3N50NZ Rev. C0 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD3N50NZ FDD3N50NZTM D-PAK 380mm 16mm 2500 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25oC 500 - - V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25oC - 0.5 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 A VDS = 400V, VGS = 0V,TC = 125oC- - 10 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 A VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 1.25A - 2.1 2.5 gFS Forward Transconductance VDS = 20V, ID = 1.25A (Note 4) - 1.9 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 210 280 pF Coss Output Capacitance - 30 45 pF Crss Reverse Transfer Capacitance - 2.5 5 pF Qg(tot) Total Gate Charge at 10V VDS = 400V ID = 2.5A VGS = 10V (Note 4, 5) - 6.2 8 nC Qgs Gate to Source Gate Charge - 1.4 - nC Qgd Gate to Drain “Miller” Charge - 3.1 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 2.5A VGS = 10V, RGEN = 25 (Note 4, 5) -10 30 ns tr Turn-On Rise Time - 15 40 ns td(off) Turn-Off Delay Time - 26 60 ns tf Turn-Off Fall Time - 17 45 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 2.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 10 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 2.5A - - 1.4 V trr Reverse Recovery Time VGS = 0V, ISD = 2.5A dIF/dt = 100A/s (Note 4) - 190 - ns Qrr Reverse Recovery Charge - 0.52 - C Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 36.6mH, IAS = 2.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 2.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Dual Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics |
类似零件编号 - FDD3N50NZ |
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类似说明 - FDD3N50NZ |
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