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FGB3236 数据表(PDF) 6 Page - Fairchild Semiconductor |
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FGB3236 数据表(HTML) 6 Page - Fairchild Semiconductor |
6 / 10 page FGB3236_F085 / FGI3236_F085 Rev. A www.fairchildsemi.com 6 Figure 13. 0 5 10 15 20 25 0 400 800 1200 1600 2000 f = 1MHz VGE = 0V CRES COES CIES VDS, DRAIN TO SOURCE VOLTAGE (V) Capacitance vs. Collector to Emitter Voltage Figure 14. 0 1020 30 4050 0 2 4 6 8 10 ICE = 10A, TJ = 25 oC VCE = 6V Qg, GATE CHARGE(nC) VCE = 12V Gate Charge Figure 15. 10 100 1000 350 360 370 380 T J = 25 oC T J = -40 oC T J = 175 oC I CER = 10mA RG, SERIES GATE RESISTANCE (Ω) 6000 Break down Voltage vs. Series Gate Resistance Figure 16. 10 -5 10 -4 10 -3 10 -2 10 -1 1 1E-3 0.01 0.1 1 SINGLE PULSE D = 0.50 0.20 0.10 0.05 0.02 0.01 t, RECTANGULAR PULSE DURATION(s) DUTY CYCLE - DESCENDING ORDER 2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC PDM t1 t2 IGBT Normalized Transient Thermal Impedance, Junction to Case Typical Performance Curves (Continued) |
类似零件编号 - FGB3236 |
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类似说明 - FGB3236 |
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