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SS569EUA 数据表(PDF) 4 Page - SEC Electronics Inc. |
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SS569EUA 数据表(HTML) 4 Page - SEC Electronics Inc. |
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4 / 8 page  SS569 Hall Latch - High Sensitivity Magnetic Specifications DC Operating Parameters VDD = 2.5V to 24V (unless otherwise specified) SS569 Parameter Symbol Test Conditions Min Typ Max Units Operating Point BOP 10 18 30 G Release Point BRP -30 -18 -10 G Hysteresis BHYST E spec., TA = 85°C 36 G Operating Point BOP 8 18 35 G Release Point BRP -35 -18 -8 G Hysteresis BHYST E spec., TA = 85°C 36 G Operating Point BOP 5 18 40 G Release Point BRP -40 -18 -5 G Hysteresis BHYST L spec., TA = 150°C 36 G Table 4: Magnetic Specifications Detailed General Description The SS569 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north poles to operate properly. The OUT pin of these devices switches low (turns on) when a magnetic field perpendicular to the Hall sensor exceeds the operate point threshold, BOP. After turn-on, the output voltage is VDSon. Note that the device latches, that is, a south pole of sufficient strength towards the branded surface of the device turns the device on. The device remains on if the south pole is removed (B→0). This latching property defines the device as a magnetic memory. When the magnetic field is reduced below the release point, BRP, the OUT pin turns off (goes high). The difference in the magnetic operating and release points is the hysteresis, BHYST, of the device. This built-in hysteresis prevents output oscillation near the switching point, and allows clean switching of the output even in the presence of external mechanical vibration and electrical noise. The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Powering-on the device in the hysteresis region (less than BOP and higher than BRP) allows an indeterminate output state. The correct state is attained after the first excursion beyond BOP or BRP. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be latched on in the presence of a sufficiently strong North pole magnetic field applied to the marked face. Output level Output level 4 V2.10 May 1, 2012 0mT 0mT OUT = High OUT = High Flux density B OP 18Gs typ OUT = Low OUT = Low UA package - Latch characteristic B OP 18Gs typ B RP -18Gs typ B RP -18Gs typ Flux density SO package - Latch characteristic HYST B B HYST |
类似零件编号 - SS569EUA |
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类似说明 - SS569EUA |
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