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PBR941 数据表(PDF) 69 Page - NXP Semiconductors

部件名 PBR941
功能描述  RF Manual 16th edition
Download  130 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

PBR941 数据表(HTML) 69 Page - NXP Semiconductors

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NXP Semiconductors RF Manual 16th edition
A disruptive technology, setting new performance boundaries for RF power amplifiers
If independent market research claims come true, GaN product
sales will exceed 300 Musd in 2014. This can only happen if GaN
is made available through mainstream semiconductor companies,
and NXP is the first to make this happen. So, what is it about GaN
and RF power applications? Simply put, GaN makes a step increase
in efficiency and power density performance over Si LDMOS in
most applications. This can be quantified in the Johnson’s Figure
of Merit (FoM) – a combination of significant RF performance
variables that has a baseline for Si at 1 and leads to a FoM for GaN
of 324. To put this into some context, GaAs, another commonly
used compound material in RF, has a FoM of 1.44. With such a high
FoM rating, GaN truly represents a breakthrough technology.
GaN products are termed High-Electron Mobility Transistors
(HEMT), a name that captures one of the intrinsic benefits of
GaN: the high electron drift velocity. These transistors are
depletion-mode devices, that is, devices that are normally on,
without the need for applying a gate bias. A negative gate
bias will be needed to switch the transistors off. This biasing
is not straightforward, but at NXP, we've developed complete
solutions (not just individual components) that include a tried
and tested bias circuit. We also provide continuous application
support throughout the life of the product.
A further advantage of GaN is that it is a very hard structure able
to withstand very high temperatures. NXP’s GaN transistors will
be specified to a maximum temperature of 250 °C, compared to
225 °C for Si LDMOS. Special packages are required to support
such high temperatures. In this area, NXP's GaN customers
benefit from our 30-year legacy in RF power products, and our
large industrial base. As a GaN supplier, we deliver excellence
in product reliability and cost, and give our customers a high
degree of confidence in the supply chain. It's part of what's
needed to take GaN to the mainstream.
The first NXP GaN products will be unmatched broadband
amplifiers for use in applications requiring high RF performance
across a wide range of frequencies up to 3.5 GHz. NXP’s first
generation GaN process is designed for products operating
from a 50V supply voltage, delivering best-in-class efficiency
and linearity. The products will use industry-standard package
footprints enabling customers to adopt NXP’s products into
existing designs without changing the mechanical design.
Next-generation GaN devices from NXP will be super-efficient,
enabling a breakthrough in performance for the largest RF
power market segment: cellular base stations. In turn this
technology will enable a departure from linear amplifier
topologies with the onset of switched mode power amplifier
(SMPA) concepts. NXP’s commitment to exploit the technology
in a full portfolio of products will also lead to products for higher
frequency applications up to 10 GHz.
GaN RF power amplifiers
Type
f
min(MHz) fmax(MHz)
P
out(W)
Matching V
DS(V)
η
D(%)
G
p(dB)
Test
signal
Package
Planned
release
Applications
CLF1G0035-50
0
3500
50
-
50
54
14.2
Pulsed
SOT467
Q312
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0035-100
0
3500
100
-
50
52
14.8
Pulsed
SOT467
Q412
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0035-200
0
3500
200
-
50
50
14.2
Pulsed
SOT1228
Q313
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0060-10
0
6000
10
-
50
54
14
Pulsed
SOT1227
Q113
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0060-30
0
6000
30
-
50
54
14
Pulsed
SOT1227
Q113
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF2G2536-100
2500
3600
100
I/O
28
65
13
Pulsed
SOT1135
Q413
Cellular, WiMAX, S-band
CLF2G2536-300
2500
3600
300
I/O
28
65
13
Pulsed
SOT502
Q413
Cellular, WiMAX, S-band
CLF3G4060-30
4000
6000
30
I/O
28
55
13
Pulsed
SOT1135
Q114
C-band
CLF3G4060-350
4000
6000
350
I/O
28
55
13
Pulsed
SOT502
Q114
C-band
2.6Technology
2.6.1
ThefirstmainstreamsemiconductorcompanytoofferGaNproducts
NXP Galium-Nitride (GaN) broadband amplifiers


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