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ST2341A 数据表(PDF) 1 Page - Stanson Technology

部件名 ST2341A
功能描述  ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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制造商  STANSON [Stanson Technology]
网页  http://www.stansontech.com
标志 STANSON - Stanson Technology

ST2341A 数据表(HTML) 1 Page - Stanson Technology

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ST2341A
P Channel Enhancement Mode MOSFET
-6.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341A 2010. Rev.1
DESCRIPTION
ST2341A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23-3L
Y: Year Code
A: Process Code
FEATURE
-30V/-6.0A, RDS(ON) = 20m-ohm (Typ.)
@VGS = -10V
-30V/-3.8A, RDS(ON) = 28m-ohm
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
1
2
D
G
S
3
1
2
41YA


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