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1N5388B 数据表(PDF) 6 Page - ON Semiconductor

部件名 1N5388B
功能描述  5 Watt Surmetic 40 Zener Voltage Regulators
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

1N5388B 数据表(HTML) 6 Page - ON Semiconductor

  1N5388B Datasheet HTML 1Page - ON Semiconductor 1N5388B Datasheet HTML 2Page - ON Semiconductor 1N5388B Datasheet HTML 3Page - ON Semiconductor 1N5388B Datasheet HTML 4Page - ON Semiconductor 1N5388B Datasheet HTML 5Page - ON Semiconductor 1N5388B Datasheet HTML 6Page - ON Semiconductor 1N5388B Datasheet HTML 7Page - ON Semiconductor  
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1N53 Series
http://onsemi.com
6
100
10
1
0.1
80
100
120
140
160
180
200
220
VZ, ZENER VOLTAGE (VOLTS)
Figure 9. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
qLA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DTJL = qJL PD
For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ (DTJ) may be estimated.
Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qVZ, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.


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