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MGRB1018 数据表(PDF) 1 Page - Motorola, Inc

部件名 MGRB1018
功能描述  Power Manager Gallium Arsenide Power Rectifier
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制造商  MOTOROLA [Motorola, Inc]
网页  http://www.freescale.com
标志 MOTOROLA - Motorola, Inc

MGRB1018 数据表(HTML) 1 Page - Motorola, Inc

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Motorola RF Device Data
Advance Information
Power Manager™
Gallium Arsenide Power Rectifier
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity
protection diodes, these state-of-the-art devices have the following features:
Planar Epitaxial Construction
Nitride Passivation for Stable Blocking Characteristics
Monolithic Dual Die Available (MGRB2018CT)
Epoxy Meets UL94, VO @ 1/8″
Hyperfast and Soft Reverse Recovery Over Specified Temperature
Range (15 ns)
Mechanical Characteristics
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads
are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Available in 24mm Tape and Reel, 800 units per reel by adding a T4
suffix to the part number
Marking: MGRB1018
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
180
V
DC Forward Current
(TC = 110°C)
IDC
10
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 85°C)
IFRM
20
A
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
IFSM
60
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
– 55 to 175
°C
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case
– Junction to Ambient
R
θJC
R
θJA
4.3
53
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), see Figure 2
(IF = 10 A)
(IF = 5 A)
VF
TJ=25°C
TJ=125°C
V
(IF = 10 A)
(IF = 5 A)
F
1.4
1.1
1.5
1.1
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 180 V)
(VR = 90 V)
IR
TJ=25°C
TJ=125°C
µA
(VR = 180 V)
(VR = 90 V)
R
25
1
685
120
Typical Reverse Recovery Time (2)
(VR = 150 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 150 V, IF = 10 A, di/dt = 200 A/µs)
trr
TJ=25°C
TJ=125°C
ns
(VR = 150 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 150 V, IF = 10 A, di/dt = 200 A/µs)
rr
12.6
13
12.4
12.7
Typical Peak Reverse Recovery Current
(VR = 150 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 150 V, IF = 10 A, di/dt = 200 A/µs)
IRM
TJ=25°C
TJ=125°C
A
(VR = 150 V, IF = 5 A, di/dt = 200 A/µs)
(VR = 150 V, IF = 10 A, di/dt = 200 A/µs)
RM
1.5
1.6
1.6
1.7
Note: This data sheet contains advance information only and is subject to change without notice.
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
(2) trr measured projecting from 25% of IRM to ground.
© Motorola, Inc. 1995
Order this document
by MGRB1018/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MGRB1018
GALLIUM ARSENIDE
RECTIFIER
10 AMPERES
180 VOLTS
CASE 418B–02
D2PAK
1
2, 4
3
1,3
2,4


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