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SI8805EDB 数据表(PDF) 5 Page - Vishay Siliconix |
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SI8805EDB 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 8 page Document Number: 67935 S12-1620-Rev. B, 09-Jul-12 www.vishay.com 5 Vishay Siliconix Si8805EDB New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Note: When mounted on 1" x 1" FR4 with full copper. * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s, 1s, 100ms 100 µs Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms DC Current Derating* 0 1 2 3 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power Derating 0 0.2 0.4 0.6 0.8 25 50 75 100 125 150 T A - Ambient Temperature (°C) |
类似零件编号 - SI8805EDB |
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类似说明 - SI8805EDB |
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