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TPIC5621L 数据表(PDF) 3 Page - Texas Instruments

部件名 TPIC5621L
功能描述  SIX-OUTPUT POWER DMOS ARRAY
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TPIC5621L 数据表(HTML) 3 Page - Texas Instruments

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TPIC5621L
SIXOUTPUT POWER DMOS ARRAY
SLIS033 − JUNE 1994
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251−1443
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
ID = 250 µA,
VGS = 0
60
V
VGS(th)
Gate-to-source threshold voltage
ID = 1 mA,
See Figure 5
VDS = VGS,
1.5
1.85
2.2
V
V(BR)
Reverse drain-to-GND breakdown voltage (across
D1, D2, and D3)
Drain-to-GND current = 250
µA
100
V
VDS(on)
Drain-to-source on-state voltage
ID = 1 A,
See Notes 2 and 3
VGS = 5 V,
0.4
0.48
V
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1 A,
VGS = 0 (Z1, Z2, Z3, Z4, Z5, Z6),
See Notes 2 and 3 and Figure 12
0.9
1.1
V
VF
Forward on-state voltage, GND-to-drain
ID = 1 A (D1, D2, D3),
See Notes 2 and 3
4.6
V
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
TC = 25°C
0.05
1
A
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
VGS = 0
TC = 125°C
0.5
10
µA
IGSSF
Forward gate current, drain short circuited to source
VGS = 16 V,
VDS = 0
10
100
nA
IGSSR
Reverse gate current, drain short circuited to
source
VSG = 16 V,
VDS = 0
10
100
nA
Ilkg
Leakage current, drain-to-GND
VDGND = 48 V
TC = 25°C
0.05
1
A
Ilkg
Leakage current, drain-to-GND
VDGND = 48 V
(D1, D2, D3)
TC = 125°C
0.5
10
µA
rDS(on)
Static drain-to-source on-state resistance
VGS = 5 V,
ID = 1 A,
TC = 25°C
0.4
0.48
rDS(on)
Static drain-to-source on-state resistance
ID = 1 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 125°C
0.65
0.68
gfs
Forward transconductance
VDS = 15 V,
ID = 0.5 A,
See Notes 2 and 3 and Figure 9
1
1.29
1.45
S
Ciss
Short-circuit input capacitance, common source
190
240
Coss
Short-circuit output capacitance, common source
VDS = 25 V,
f = 1 MHz,
VGS = 0,
See Figure 11
100
125
pF
Crss
Short-circuit reverse transfer capacitance,
common source
VDS = 25 V,
f = 1 MHz,
VGS = 0,
See Figure 11
40
50
pF
NOTES:
2. Technique should limit TJ − TC to 10°C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.
source-to-drain and GND-to-drain diode characteristics, TC = 25°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Z1, Z2, Z3
65
trr
Reverse recovery time
I
= 0.5 A,
V
= 48 V,
Z4, Z5, Z6
150
ns
trr
Reverse recovery time
IS = 0.5 A,
VGS = 0,
VDS = 48 V,
di/dt = 100 A/
µs,
D1, D2, D3
200
ns
S
VGS = 0,
See Figures 1 and 14
DS
di/dt = 100 A/
µs,
Z1, Z2, Z3
0.06
QRR
Total diode charge
See Figures 1 and 14
Z4, Z5, Z6
0.3
µC
QRR
Total diode charge
D1, D2, D3
0.7
µC


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