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SN74BCT2410 数据表(PDF) 4 Page - Texas Instruments |
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SN74BCT2410 数据表(HTML) 4 Page - Texas Instruments |
4 / 6 page SN74BCT2410 11BIT MOS MEMORY DRIVER WITH 3STATE OUTPUTS SCBS119B − JUNE 1990 − REVISED NOVEMBER 1993 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 switching characteristics over recommended ranges of supply voltage and operating free-air temperature, CL = 50 pF (unless otherwise noted) (see Note 3) PARAMETER FROM (INPUT) TO (OUTPUT) VCC = 5 V, TA = 25°C MIN MAX UNIT PARAMETER (INPUT) (OUTPUT) MIN TYP MAX MIN MAX UNIT tPLH A Y 2 4.9 6.5 2 8.5 ns tPHL A Y 2.3 5.6 7.5 2.3 8.5 ns tPZH OE Y 4.5 10.3 13 4.5 16.5 ns tPZL OE Y 2 11.4 16 2 19 ns tPHZ OE Y 3.4 7 9.5 3.4 12 ns tPLZ OE Y 5.3 9.2 11.5 5.3 13.5 ns NOTE 3: Load circuits and voltage waveforms are shown in Section 1. |
类似零件编号 - SN74BCT2410 |
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类似说明 - SN74BCT2410 |
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