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74LVC2G17GW-Q100 数据表(PDF) 6 Page - NXP Semiconductors |
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74LVC2G17GW-Q100 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 16 page 74LVC2G17_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 7 August 2012 6 of 16 NXP Semiconductors 74LVC2G17-Q100 Dual non-inverting Schmitt trigger with 5 V tolerant input [1] All typical values are measured at VCC = 3.3 V and Tamb = 25 C. 12. Dynamic characteristics [1] Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in W). PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of outputs. IOFF power-off leakage current VI or VO = 5.5 V; VCC = 0 V - - 20 A ICC supply current VI =VCC or GND; IO =0A; VCC =5.5 V -- 40 A I CC additional supply current VI =VCC 0.6 V; IO =0A; VCC = 2.3 V to 5.5 V -- 5 mA Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ[1] Max Min Max tpd propagation delay nA to nY; see Figure 5 [2] VCC = 1.65 V to 1.95 V 1.5 5.6 10.5 1.5 13.1 ns VCC = 2.3 V to 2.7 V 1.0 3.7 6.5 1.0 8.5 ns VCC = 2.7 V 1.0 3.8 6.5 1.0 8.5 ns VCC = 3.0 V to 3.6 V 1.0 3.6 5.7 1.0 7.1 ns VCC = 4.5 V to 5.5 V 1.0 2.7 4.3 1.0 5.4 ns CPD power dissipation capacitance per buffer; VCC =3.3 V; VI =GND to VCC [3] - 16.3 - - - pF |
类似零件编号 - 74LVC2G17GW-Q100 |
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类似说明 - 74LVC2G17GW-Q100 |
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