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UA592 数据表(PDF) 3 Page - Texas Instruments

部件名 UA592
功能描述  MuA592 Differential Video Amplifier
Download  10 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

UA592 数据表(HTML) 3 Page - Texas Instruments

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Storage Temperature Range
Ceramic DIP
b
65 Cto a175 C
Molded DIP SO-8
b
65 Cto a150 C
Operating Temperature Range
Extended (mA592M)
b
55 Cto a125 C
Commercial (mA592C)
0 Cto a70 C
Lead Temperature
Ceramic DIP (Soldering 60 sec)
300 C
Molded DIP and SO Package
(Soldering 10 sec)
265 C
Internal Power Dissipation (Notes 1 2)
8L-Molded DIP
093W
SO-8
081W
14L-Molded DIP
104W
14L-Ceramic DIP
136W
Supply Voltage
g
80V
Differential Input Voltage
g
50V
Common Mode Input Voltage
g
60V
Output Current
10 mA
mA592 and mA592C
Electrical Characteristics TA e 25 C VCC e g60V unless otherwise specified
Symbol
Parameter
Conditions
mA592
mA592C
Units
(Notes 3 4)
Min
Typ
Max
Min
Typ
Max
AVD
Differential Voltage
RL e 20 kX
Gain 1
300
400
500
250
400
600
VV
Gain
VO e 30 VP–P
Gain 2
90
100
110
80
100
120
BW
Bandwidth
RS e 50X
Gain 1
40
40
MHz
Gain 2
90
90
tr
Risetime
RS e 50X
Gain 1
105
105
ns
VO e 10 VP–P
Gain 2
45
10
45
12
tPD
Propagation Delay
RS e 50X
Gain 1
75
75
ns
VO e 10 VP–P
Gain 2
60
10
60
10
ZI
Input Impedance
Gain 1
40
40
kX
Gain 2
20
30
10
30
CI
Input Capacitance
Gain 2
20
20
pF
IIO
Input Offset Current
04
30
04
50
m
A
IIB
Input Bias Current
90
20
90
30
m
A
en
Input Noise Voltage
RS e 50X
12
12
m
Vrms
BW e 10 kHz to 10 MHz
VIR
Input Voltage Range
g
10
g
10
V
CMR
Common Mode Rejection
VCM e 10V Gain 2
60
86
60
86
dB
PSRR
Power Supply
D
VCC e g05V Gain 2
50
70
50
70
dB
Rejection Ratio
VOO
Output Offset Voltage
Gain 1
06
15
06
15
V
Gain 2
035
075
035
075
VOCM
Output Common
24
29
34
24
29
34
V
Mode Voltage
VOP
Output Voltage Swing
30
40
30
40
VP–P
IOb
Output Sink Current
25
36
25
36
mA
RO
Output Resistance
20
20
X
ICC
Supply Current
18
24
18
24
mA
Note 1
TJ Max e 150 C for the Molded DIP and SOIC and 175 C for the Ceramic DIP
Note 2
Ratings apply to ambient temperature at 25 C Above this temperature derate the 8L-Molded DIP at 75 mW C the SO-8 at 65 mW C the 14L-Molded
DIP at 83 mW C and the 14L-Ceramic DIP at 91 mW C
Note 3
Gain Select leads G1A and G1B connected together for Gain 1 and Gain Select leads G2A and G2B connected together for Gain 2
Note 4
Gain 2 not applicable to 8 lead device
2


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