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BYG10D 数据表(PDF) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
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BYG10D 数据表(HTML) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
2 / 2 page RATINGS AND CHARACTERISTIC CURVES BYG10D THRU BYG10M Figure 5. Thermal Response E-mail: sales@taychipst.com Web Site: www.taychipst.com 2 of 2 BYG10D THRU BYG10M 200V-1000V 1.5A Silicon Mesa SMD Rectifier 0 40 80 120 160 0.01 0.1 1 10 100 Tj – Junction Temperature ( °C ) 200 94 9180 VR =VRRM Figure 1. Typ. Reverse Current vs. Junction Temperature 0 0 0.4 0.8 1.2 1.6 2.0 Tamb – Ambient Temperature ( °C ) 94 9179 40 80 120 160 200 125K/W 100K/W 150K/W RthJA=25K/W Figure 2. Max. Average Forward Current vs. Ambient Temperature 0 0.6 1.2 1.8 2.4 0.01 0.1 1 10 100 VF – Forward Voltage ( V ) 3.0 94 9284 Tj =25°C Tj =75°C Tj = 125°C Figure 3. Typ. Forward Current vs. Forward Voltage 0 0 1000 2000 3000 4000 5000 94 9544 0.2 0.4 0.6 0.8 IF – Forward Current ( A ) 1.0 Tamb= 100°C Tamb= 125°C Tamb=50°C IR=0.5A, iR=0.125A Tamb =25°C Tamb =75°C Figure 4. Typ. Reverse Recovery Time vs. Forward Current 1 10 100 1000 tp – Pulse Length ( s ) 94 9339 10–5 10–4 10–3 10–2 10–1 100 101 102 tp/T=0.5 tp/T=0.2 tp/T=0.1 tp/T=0.05 tp/T=0.02 tp/T=0.01 Single Pulse 125K/W DC |
类似零件编号 - BYG10D |
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类似说明 - BYG10D |
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