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DRV8800QRTYRQ1 Datasheet(数据表) 16 Page - Texas Instruments

部件型号  DRV8800QRTYRQ1
说明  DMOS FULL-BRIDGE MOTOR DRIVERS
下载  23 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
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DRV8800QRTYRQ1 Datasheet(HTML) 16 Page - Texas Instruments

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P =I (2
R
)
D
DS(on)Sink
2
´
DRV8800-Q1
DRV8801-Q1
SLVSAS7
– FEBRUARY 2011
www.ti.com
Slow-Decay SR (Brake Mode)
In slow-decay mode, both low-side sinking drivers turn on, allowing the current to circulate through the H-bridge
’s
low side (two sink drivers) and the load. Power dissipation I2R loses in the two sink DMOS drivers:
(2)
SENSE
A low-value resistor can be placed between the SENSE pin and ground for current-sensing purposes. To
minimize ground-trace IR drops in sensing the output current level, the current-sensing resistor should have an
independent ground return to the star ground point. This trace should be as short as possible. For low-value
sense resistors, the IR drops in the PCB can be significant, and should be taken into account.
NOTE
When selecting a value for the sense resistor, SENSE does not exceed the maximum
voltage of
±500 mV. The H-bridge is disabled and enters recirculation while motor winding
current is above a SENSE voltage equal or greater than 500 mV.
Ground
A ground power plane should be located as close to the DRV8800-Q1/DRV8801-Q1 as possible. The copper
ground plane directly under the PowerPAD package makes a good location. This pad can then be connected to
ground for this purpose.
Layout
The printed circuit board (PCB) should use a heavy ground plane. For optimum electrical and thermal
performance, the DRV8800-Q1/DRV8801-Q1 must be soldered directly onto the board. On the underside of the
DRV8800-Q1/DRV8801-Q1 is a PowerPAD package, which provides a path for enhanced thermal dissipation.
The thermal pad should be soldered directly to an exposed surface on the PCB. Thermal vias are used to
transfer heat to other layers of the PCB. For more information on this technique, please refer to document
SLMA002.
The load supply pin, VBB, should be decoupled with an electrolytic capacitor (typically 100
μF) in parallel with a
ceramic capacitor placed as close as possible to the device. The ceramic capacitors between VCP and VBB,
connected to VREG, and between CP1 and CP2 should be as close to the pins of the device as possible, in
order to minimize lead inductance.
16
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© 2011, Texas Instruments Incorporated
Product Folder Link(s): DRV8800-Q1 DRV8801-Q1




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