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CSD17309Q3 数据表(PDF) 1 Page - Texas Instruments |
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CSD17309Q3 数据表(HTML) 1 Page - Texas Instruments |
1 / 11 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0095-01 VGS - Gate-to-Source Voltage - V 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 TC = 25°C TC = 125°C G006 ID = 18A Qg - Gate Charge - nC 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 1 3 5 7 G003 ID = 18A VDS = 15V CSD17309Q3 www.ti.com SLPS261A – MARCH 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17309Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 • Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 7.5 nC • Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 1.7 nC • Low Thermal Resistance VGS = 3V 6.3 m Ω • Avalanche Rated RDS(on) Drain to Source On Resistance VGS = 4.5V 4.9 m Ω VGS = 8V 4.2 m Ω • Pb Free Terminal Plating VGS(th) Threshold Voltage 1.2 V • RoHS Compliant • Halogen Free ORDERING INFORMATION • SON 3.3-mm × 3.3-mm Plastic Package Device Package Media Qty Ship SON 3.3-mm × 3.3-mm 13-Inch Tape and CSD17309Q3 2500 APPLICATIONS Plastic Package Reel Reel • Notebook Point of Load • Point-of-Load Synchronous Buck in ABSOLUTE MAXIMUM RATINGS Networking, Telecom, and Computing Systems TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V DESCRIPTION VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 60 A The NexFET™ power MOSFET has been designed ID Continuous Drain Current(1) 20 A to minimize losses in power conversion applications and optimized for 5V gate drive applications. IDM Pulsed Drain Current, TA = 25°C (2) 112 A PD Power Dissipation(1) 2.8 W Top View TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, Single Pulse EAS 162 mJ ID = 57A, L = 0.1mH, RG = 25Ω (1) Typical RqJA = 45°C/W when mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing Text_added_for_spacing_Text_added_for_spacing RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
类似零件编号 - CSD17309Q3 |
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类似说明 - CSD17309Q3 |
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