MCM69P536C

7

MOTOROLA FAST SRAM

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VDD

3.135

3.3

3.6

V

Input Low Voltage

VIL

– 0.5*

—

0.8

V

Input High Voltage

VIH

2

—

5.5**

V

*VIL ≥ – 2 V for t ≤ tKHKH /2.

** VIH ≤ 6 V for tKHKH /2.

DC CHARACTERISTICS AND SUPPLY CURRENTS

Parameter

Symbol

Min

Max

Unit

Notes

Input Leakage Current (0 V

≤ Vin ≤ VDD) (Excluding LBO)

Ilkg(I)

—

± 1

µA

Output Leakage Current (0 V

≤ Vin ≤ VDD)

Ilkg(O)

—

± 1

µA

AC Supply Current (Device Selected,

MCM69P536C–4

All Outputs Open, Cycle Time

≥ tKHKH min)

MCM69P536C–4.5

MCM69P536C–5

MCM69P536C–6

MCM69P536C–7

IDDA

—

420

410

380

360

350

mA

1, 2, 3

CMOS Standby Supply Current (Deselected,

MCM69P536C–4

≥ tKHKH,

MCM69P536C–4.5

All Inputs Toggling at CMOS Levels

MCM69P536C–5

Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)

MCM69P536C–6

MCM69P536C–7

ISB1

—

170

170

150

140

130

mA

4

Clock Running Supply Current (Deselected,

MCM69P536C–4

≥ tKHKH,

MCM69P536C–4.5

All Other Inputs Held to Static CMOS Levels

MCM69P536C–5

Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)

MCM69P536C–6

MCM69P536C–7

ISB2

—

60

60

55

50

45

mA

4

Output Low Voltage (IOL = 8 mA)

VOL

—

0.4

V

Output High Voltage (IOH = – 4 mA)

VOH

2.4

—

V

NOTES:

1. Reference AC Operating Conditions and Characteristics for input and timing.

2. All addresses transition simultaneously low (LSB) and then high (HSB).

3. Data states are all zero.

4. Device in deselected mode as defined by the Truth Table.

Parameter

Symbol

Min

Typ

Max

Unit

Input Capacitance

Cin

—

4

6

pF

Input/Output Capacitance

CI/O

—

7

9

pF