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MCM69F536CTQ12 数据表(PDF) 6 Page - Motorola, Inc |
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MCM69F536CTQ12 数据表(HTML) 6 Page - Motorola, Inc |
6 / 12 page MCM69F536C 6 MOTOROLA FAST SRAM ABSOLUTE MAXIMUM RATINGS (See Note 1) Rating Symbol Value Unit Power Supply Voltage VDD – 0.5 to + 4.6 V Voltage Relative to VSS for Any Pin Except VDD Vin, Vout – 0.5 to 6.0 V Output Current (per I/O) Iout ± 20 mA Package Power Dissipation (See Note 2) PD 1.6 W Temperature Under Bias Tbias – 10 to 85 °C Storage Temperature Tstg – 55 to 125 °C NOTES: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER– ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. 2. Power dissipation capability is dependent upon package characteristics and use environment. See Package Thermal Characteristics. PACKAGE THERMAL CHARACTERISTICS Rating Symbol Max Unit Notes Thermal Resistance Junction to Ambient (@ 200 lfm) Single–Layer Board Four–Layer Board R θJA 40 25 °C/W 1, 2 Thermal Resistance Junction to Board (Bottom) R θJB 17 °C/W 1, 3 Thermal Resistance Junction to Case (Top) R θJC 9 °C/W 1, 4 NOTES: 1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, board population, and board thermal resistance. 2. Per SEMI G38–87. 3. Indicates the average thermal resistance between the die and the printed circuit board. 4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1). This device contains circuitry to protect the inputs against damage due to high static volt- ages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maxi- mum rated voltages to this high–impedance circuit. |
类似零件编号 - MCM69F536CTQ12 |
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类似说明 - MCM69F536CTQ12 |
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