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MCM69F817ZP6R 数据表(PDF) 1 Page - Motorola, Inc |
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MCM69F817ZP6R 数据表(HTML) 1 Page - Motorola, Inc |
1 / 16 page MCM69F817 1 MOTOROLA FAST SRAM Product Preview 256K x 18 Bit Flow–Through BurstRAM ™ Synchronous Fast Static RAM The MCM69F817 is a 4M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC ™ and other high performance microprocessors. It is organized as 256K words of 18 bits each. This device integrates input registers, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). Addresses (SA), data inputs (DQx), and all control signals except output enable (G) and linear burst order (LBO) are clock (K) controlled through positive– edge–triggered noninverting registers. Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst addresses can be generated internally by the MCM69F817 (burst sequence operates in linear or interleaved mode dependent upon the state of LBO) and controlled by the burst address advance (ADV) input pin. Write cycles are internally self–timed and are initiated by the rising edge of the clock (K) input. This feature eliminates complex off–chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchro- nous write enable (SW) are provided to allow writes to either individual bytes or to all bytes. The two bytes are designated as “a” and “b”. SBa controls DQa and SBb controls DQb. Individual bytes are written if the selected byte writes SBx are asserted with SW. All bytes are written if either SGW is asserted or if all SBx and SW are asserted. For read cycles, a flow–through SRAM allows output data to simply flow freely from the memory array. The MCM69F817 operates from a 3.3 V core power supply and all outputs operate on a 3.3 V or 2.5 V power supply. All inputs and outputs are JEDEC stan- dard JESD8–5 compatible. • MCM69F817 Speed Options Speed tKHKH Flow–Through tKHQV Setup Hold IDD 150 MHz 6.7 ns 6 ns 0.5 ns 1 ns 375 mA 133 MHz 7.5 ns 6.5 ns 0.5 ns 1 ns 350 mA 117 MHz 8.5 ns 7 ns 0.5 ns 1 ns 325 mA • 3.3 V + 10%, – 5% Core Power Supply, Operates with a 3.3 V or 2.5 V I/O Supply • ADSP, ADSC, and ADV Burst Control Pins • Selectable Burst Sequencing Order (Linear/Interleaved) • Single–Cycle Deselect Timing • Internally Self–Timed Write Cycle • Byte Write and Global Write Control • PB1 Version 2.0 Compatible • JEDEC Standard 119–Pin PBGA Package BurstRAM is a trademark of Motorola, Inc. The PowerPC name is a trademark of IBM Corp., used under license therefrom. This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice. Order this document by MCM69F817/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69F817 ZP PACKAGE PBGA CASE 999–01 REV 1 6/26/97 © Motorola, Inc. 1997 |
类似零件编号 - MCM69F817ZP6R |
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类似说明 - MCM69F817ZP6R |
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