MCM69D618

6

MOTOROLA FAST SRAM

Rating

Symbol

TQFP

Unit

Notes

Junction to Ambient (@ 200 lfm)

Single–Layer Board

Four–Layer Board

R

θJA

40

25

°C/W

2

Junction to Board (Bottom)

R

θJB

17

°C/W

3

Junction to Case (Top)

R

θJC

9

°C/W

4

NOTES:

1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient

temperature, air flow, board population, and board thermal resistance.

2. Per SEMI G38–87.

3. Indicates the average thermal resistance between the die and the printed circuit board.

4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VDD = 3.3 V ± 5%, TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS AND SUPPLY CURRENTS

Parameter

Symbol

Min

Max

Unit

Supply Voltage (Operating Voltage Range)

VDD

3.135

3.465

V

Input High Voltage

VIH

2.0

VDD + 0.5**

V

Input Low Voltage

VIL

– 0.5*

0.8

V

Input Leakage Current (All Inputs, Vin = 0 to VDD)

Ilkg(I)

—

± 1.0

µA

Output Leakage Current (E = VIH, Vout = 0 to VDD)

Ilkg(O)

—

± 1.0

µA

AC Supply Current (Iout = 0 mA) (VDD = max, f = fmax)

MCM69D618–6 ns

MCM69D618–8 ns

IDDA

—

—

300

300

mA

CMOS Standby Supply Current (Deselected, Clock (K)

MCM69D618–6 ns

Cycle Time

≥ tKHKH, All Inputs Toggling at CMOS Levels MCM69D618–8 ns

Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)

ISB1

—

—

100

100

mA

Output Low Voltage (IOL = + 8.0 mA)

VOL

—

0.4

V

Output High Voltage (IOH = – 4.0 mA)

VOH

2.4

VDD

V

*VIL ≥ –1.5 V for t ≤ tKHKH/2.

** VIH ≤ VDD + 1.0 V for t ≤ tKHKH/2.

Parameter

Symbol

Max

Unit

Address and Data Input Capacitance

Cin

6

pF

Control Pin Input Capacitance

Cin

6

pF

Output Capacitance

Cout

8

pF