BAS116LPH4-7B datasheet(2/4 Pages) DIODES

部件名	BAS116LPH4-7B

功能描述	SURFACE MOUNT SWITCHING DIODE

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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BAS116LPH4

Document number: DS35242 Rev. 5 - 2

2 of 4

www.diodes.com

November 2011

BAS116LPH4

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

85

V

RMS Reverse Voltage

VR(RMS)

60

V

Forward Continuous Current (Note 4)

IFM

215

mA

Repetitive Peak Forward Current

IFRM

500

mA

Non-Repetitive Peak Forward Surge Current

@ t = 1.0

μs

@ t = 1.0ms

@ t = 1.0s

IFSM

4.0

1.0

0.5

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

PD

300

mW

Thermal Resistance Junction to Ambient Air (Note 4)

RθJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 5)

V(BR)R

85

⎯

V

IR = 100μA

Forward Voltage

VF

⎯

0.9

1.0

1.1

1.25

V

IF = 1.0mA

IF = 10mA

IF = 50mA

IF = 150mA

Leakage Current (Note 5)

IR

⎯

5.0

80

nA

VR = 75V

VR = 75V, TJ = 150°C

Total Capacitance

CT

⎯

1.5

⎯

pF

VR = 0, f = 1.0MHz

Reverse Recovery Time

trr

⎯

3.0

μs

IF = IR = 10mA,

Irr = 0.1 x IR, RL = 100Ω

Notes:

4.

Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.

5.

Short duration pulse test used to minimize self-heating effect.

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Derating Curve, Total Package

A

Note 4

50

100

150

200

250

300

V , INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

F

0.01

0.1

1

10

100

1,000

0

0.2

0.4

0.6

0.8

1.0

1.2

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