MCM6729B

2

MOTOROLA FAST SRAM

E

G

W

Mode

VCC Current

Output

Cycle

H

X

X

Not Selected

ISB1, ISB2

High–Z

—

L

H

H

Output Disabled

ICCA

High–Z

—

L

L

H

Read

ICCA

Dout

Read Cycle

L

X

L

Write

ICCA

High–Z

Write Cycle

Rating

Symbol

Value

Unit

Power Supply Voltage

VCC

– 0.5 to + 7.0

V

Voltage Relative to VSS for Any Pin Except

VCC

Vin, Vout

– 0.5 to VCC + 0.5

V

Output Current

Iout

±30

mA

Power Dissipation

PD

1.2

W

Temperature Under Bias

Tbias

– 10 to + 85

°C

Operating Temperature

TA

0 to + 70

°C

Storage Temperature — Plastic

Tstg

– 55 to + 125

°C

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are

exceeded. Functional operation should be restricted to RECOMMENDED OPER-

ATING CONDITIONS. Exposure to higher than recommended voltages for

extended periods of time could affect device reliability.

DC OPERATING CONDITIONS AND CHARACTERISTICS

(VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted)

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage (Operating Voltage Range)

VCC

4.5

5.0

5.5

V

Input High Voltage

VIH

2.2

—

V

Input Low Voltage

VIL

– 0.5

*

—

0.8

V

*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.

** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA.

DC CHARACTERISTICS

Parameter

Symbol

Min

Max

Unit

Input Leakage Current (All Inputs, Vin = 0 to VCC)

Ilkg(I)

—

± 1.0

µA

Output Leakage Current (E = VIH, Vout = 0 to VCC)

Ilkg(O)

—

± 1.0

µA

Output Low Voltage (IOL = + 8.0 mA)

VOL

—

0.4

V

Output High Voltage (IOH = – 4.0 mA)

VOH

2.4

—

V

POWER SUPPLY CURRENTS

Parameter

Symbol

6729B–8

6729B–10

6729B–12

Unit

Notes

AC Active Supply Current (Iout = 0 mA) (VCC = max, f = fmax)

ICCA

195

165

155

mA

1, 2, 3

Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz)

ICC2

90

90

90

mA

AC Standby Current (E = VIH, VCC = max, f = fmax)

ISB1

60

60

60

mA

1, 2, 3

CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V,

Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V)

ISB2

20

20

20

mA

NOTES:

1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V).

2. All addresses transition simultaneously low (LSB) and then high (MSB).

3. Data states are all zero.

This device contains circuitry to protect the in-

puts against damage due to high static voltages

or electric fields; however, it is advised that nor-

mal precautions be taken to avoid application of

any voltage higher than maximum rated volt-

ages to these high–impedance circuits.

This BiCMOS memory circuit has been de-

signed to meet the dc and ac specifications

shown in the tables, after thermal equilibrium

has been established. The circuit is in a test

socket or mounted on a printed circuit board

and transverse air flow of at least 500 linear feet

per minute is maintained.