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MCM6729BWJ8R 数据表(PDF) 2 Page - Motorola, Inc |
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MCM6729BWJ8R 数据表(HTML) 2 Page - Motorola, Inc |
2 / 7 page MCM6729B 2 MOTOROLA FAST SRAM TRUTH TABLE (X = Don’t Care) E G W Mode VCC Current Output Cycle H X X Not Selected ISB1, ISB2 High–Z — L H H Output Disabled ICCA High–Z — L L H Read ICCA Dout Read Cycle L X L Write ICCA High–Z Write Cycle ABSOLUTE MAXIMUM RATINGS (See Note) Rating Symbol Value Unit Power Supply Voltage VCC – 0.5 to + 7.0 V Voltage Relative to VSS for Any Pin Except VCC Vin, Vout – 0.5 to VCC + 0.5 V Output Current Iout ±30 mA Power Dissipation PD 1.2 W Temperature Under Bias Tbias – 10 to + 85 °C Operating Temperature TA 0 to + 70 °C Storage Temperature — Plastic Tstg – 55 to + 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER- ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. DC OPERATING CONDITIONS AND CHARACTERISTICS (VCC = 5.0 V ± 10%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit Supply Voltage (Operating Voltage Range) VCC 4.5 5.0 5.5 V Input High Voltage VIH 2.2 — VCC + 0.3** V Input Low Voltage VIL – 0.5 * — 0.8 V *VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA. ** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width ≤ 2.0 ns) for I ≤ 20.0 mA. DC CHARACTERISTICS Parameter Symbol Min Max Unit Input Leakage Current (All Inputs, Vin = 0 to VCC) Ilkg(I) — ± 1.0 µA Output Leakage Current (E = VIH, Vout = 0 to VCC) Ilkg(O) — ± 1.0 µA Output Low Voltage (IOL = + 8.0 mA) VOL — 0.4 V Output High Voltage (IOH = – 4.0 mA) VOH 2.4 — V POWER SUPPLY CURRENTS Parameter Symbol 6729B–8 6729B–10 6729B–12 Unit Notes AC Active Supply Current (Iout = 0 mA) (VCC = max, f = fmax) ICCA 195 165 155 mA 1, 2, 3 Active Quiescent Current (E = VIL, VCC = max, f = 0 MHz) ICC2 90 90 90 mA AC Standby Current (E = VIH, VCC = max, f = fmax) ISB1 60 60 60 mA 1, 2, 3 CMOS Standby Current (VCC = max, f = 0 MHz, E ≥ VCC – 0.2 V, Vin ≤ VSS + 0.2 V, or ≥ VCC – 0.2 V) ISB2 20 20 20 mA NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr/tf, pulse level 0 to 3.0 V, VIH = 3.0 V). 2. All addresses transition simultaneously low (LSB) and then high (MSB). 3. Data states are all zero. This device contains circuitry to protect the in- puts against damage due to high static voltages or electric fields; however, it is advised that nor- mal precautions be taken to avoid application of any voltage higher than maximum rated volt- ages to these high–impedance circuits. This BiCMOS memory circuit has been de- signed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. |
类似零件编号 - MCM6729BWJ8R |
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类似说明 - MCM6729BWJ8R |
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