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TS12012 数据表(PDF) 8 Page - Touchstone Semiconductor Inc |
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TS12012 数据表(HTML) 8 Page - Touchstone Semiconductor Inc |
8 / 11 page TS12011/TS12012 Page 8 TS12011_12DS r1p0 RTFDS 1) Setting R2. As the leakage current at the IN pin is less than 20nA, the current through R2 should be at least 150nA to minimize offset voltage errors caused by the input leakage current. The current through R2 at the trip point is (VREFOUT - VCOMPOUT)/R2. In solving for R2, there are two formulas – one each for the two possible output states: R2 = VREFOUT/IR2 or R2 = (VDD - VREFOUT)/IR2 From the results of the two formulae, the smaller of the two resulting resistor values is chosen. For example, when using the TS12011 (VREFOUT = 0.58V) at a VDD = 2.5V and if IR2 = 150nA is chosen, then the formulae above produce two resistor values: 3.87M Ω and 12.8MΩ - a 4.02MΩ standard value for R2 is selected. 2) Next, the desired hysteresis band (VHYSB) is set. In this example, VHYSB is set to 100mV. 3) Resistor R1 is calculated according to the following equation: R1 = R2 x (VHYSB/VDD) and substituting the values selected in 1) and 2) above yields: R1 = 4.02M Ω x (100mV/2.5V) = 160.8kΩ. The 160 kΩ standard value for R1 is chosen. 4) The trip point for COMPIN+ rising (VTHR) is chosen such that VTHR > VREFOUT x (R1 + R2)/R2 (VTHF is the trip point for VCOMPIN+ falling). This is the threshold voltage at which the comparator switches its output from low to high as VCOMPIN+ rises above the trip point. In this example, VTHR is set to 2. 5) With the VTHR from Step 4 above, resistor R3 is then computed as follows: R3 = 1/[VTHR/(VREFOUT x R1) - (1/R1) - (1/R2)] R3 = 1/[2V/(0.58 V x 160kΩ) - (1/160kΩ) - (1/4.02MΩ)] = 66.43kΩ In this example, a 69.8 kΩ, 1% standard value resistor is selected for R3. 6) The last step is to verify the trip voltages and hysteresis band using the standard resistance values: For VCOMPIN+ rising: VTHR = VREFOUT x R1 [(1/R1) + (1/R2) + (1/R3)] = 1.93V For VCOMPIN+ falling: VTHF = VTHR - (R1 x VDD/R2) = 1.83V and Hysteresis Band = VTHR – VTHF = 100mV Figure 2. Using Three Resistors Introduces Additional Hysteresis in the TS12011 |
类似零件编号 - TS12012 |
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类似说明 - TS12012 |
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