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ADP7102ACPZ-1.8-R7 数据表(PDF) 5 Page - Analog Devices

部件名 ADP7102ACPZ-1.8-R7
功能描述  20 V, 300 mA, Low Noise, CMOS LDO
Download  28 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP7102ACPZ-1.8-R7 数据表(HTML) 5 Page - Analog Devices

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Data Sheet
ADP7102
Rev. A | Page 5 of 28
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
VIN to GND
–0.3 V to +22 V
VOUT to GND
–0.3 V to +20 V
EN/UVLO to GND
–0.3 V to VIN
PG to GND
–0.3 V to VIN
SENSE/ADJ to GND
–0.3 V to VOUT
Storage Temperature Range
–65°C to +150°C
Operating Junction Temperature Range
–40°C to +125°C
Operating Ambient Temperature Range
–40°C to +85°C
Soldering Conditions
JEDEC J-STD-020
Stresses above those listed under absolute maximum ratings
may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP7102 can be damaged when the junction
temperature limit is exceeded. Monitoring ambient temperature
does not guarantee that TJ is within the specified temperature
limits. In applications with high power dissipation and poor
thermal resistance, the maximum ambient temperature may
have to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (TJ) of
the device is dependent on the ambient temperature (TA), the
power dissipation of the device (PD), and the junction-to-
ambient thermal resistance of the package (θJA).
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
TJ = TA + (PD × θJA)
Junction-to-ambient thermal resistance (θJA) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending
on PCB material, layout, and environmental conditions. The
specified values of θJA are based on a 4-layer, 4 in. × 3 in. circuit
board. See JESD51-7 and JESD51-9 for detailed information on
the board construction. For additional information, see the
AN-617 Application Note, MicroCSP™ Wafer Level Chip Scale
Package, available at www.analog.com.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/W. The package’s ΨJB is based on modeling and
calculation using a 4-layer board. The JESD51-12, Guidelines
for Reporting and Using Electronic Package Thermal
Information, states that thermal characterization parameters are
not the same as thermal resistances. ΨJB measures the
component power flowing through multiple thermal paths
rather than a single path as in thermal resistance, θJB. Therefore,
ΨJB thermal paths include convection from the top of the
package as well as radiation from the package, factors that make
ΨJB more useful in real-world applications. Maximum junction
temperature (TJ) is calculated from the board temperature (TB)
and power dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
See JESD51-8 and JESD51-12 for more detailed information
about ΨJB.
Thermal Resistance
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
θJC is a parameter for surface-mount packages with top
mounted heatsinks. θJC is presented here for reference only.
Table 4. Thermal Resistance
Package Type
θJA
θJC
ΨJB
Unit
8-Lead LFCSP
40.1
27.1
17.2
°C/W
8-Lead SOIC
48.5
58.4
31.3
°C/W
ESD CAUTION


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